Conventionally, silicon semiconductors usually used as a sensor or photovoltaic which based on principles of generation of carrier by absorption of photon. These carrier produce in the form of electron in conduction band and hole in valence band by excite of electron from valence band to conduction by absorption of photon energy. This photon absorption will determine the efficiency of the sensor or photovoltaic. In this paper, the analysis of a single crystalline <100> type n with resistivity of 10 ohm cm by radiation of photon energy 0.8 - 1.8 eV. By assuming that the carrier was generated only by transition electron to conduction band and leave the hole in valence band, the rate carrier generation per unit power as a function of photon energy calculated by using mathematical model (Zeghbock, B, 2011) application. The the rate carrier generation per unit power in room temperature was created from range of 3.5 to 6.5 1022 cm^-3 S^-1 W^-1 . The analysis also developed for photon energy of 1.17, 1,6 and 1.8 as a function temperature in the range of 30 - 300^oC . The results will given the rate carrier generation per unit power as function of temperature.

Keywords: Silicon, absorption, rate carrier, model, worksheet, generation, absorption coefficient.

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